Interlayer coupling and layer-dependent electronic structure in 2D materials-东北师范大学物理学院
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Interlayer coupling and layer-dependent electronic structure in 2D materials

来源:  发布时间:2015-07-13 00:00:00 点击次数:

主 讲 人: 申泽骧教授

报告时间: 7月13日(周一)下午16:00


主讲人简介:1977年考入吉林大学物理系, 1989年在英国King’s College获博士学位,现在于新加坡南洋理工大学任教,并担任物理与数学科学学院副院长(主管科研与研究生教育工作)。在《Phys. Rev.》、《Appl. Phys. Lett.》等国际权威杂志上发表论文100多篇,擅长超高压技术、超高压下的Raman、红外光谱分析,是一位超高压谱学专家,也是国际物理奥林匹克委员会成员,多种权威杂志评审员。

报告内容简介:Following the extensive research work on graphene, a lot of attention has now been focused on two dimensional transition metal dichalcogenide (2D TMD) materials which can in principle compensate some of the disadvantages of graphene, such as lack of a energy bandgap. 2D TMD often show very strong layer-dependent properties. For example, their properties can be strongly influenced by the stacking of the layers, the relative orientation of the layers and the number of layers. Detailed understanding of the inter-layer interaction will help greatly in tailoring the properties of 2D TMD materials for applications. Raman/Photoluminescence (PL) spectroscopy and imaging have been extensively used in the study of nano-materials and nano-devices. They provide critical information for the characterization of the materials such as electronic structure, optical property, phonon structure, defects, doping and stacking sequence.

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